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| IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET NChannel Enhancement Mode N-Channel Enhancement Mode Switch Mode RF MOSFET Low Qg and Z-MOSTM MOSFET Process Low Capacitance Rg High for RF Operation Optimized dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient Tc = 25C Tc = 25C, pulse width limited by TJM Tc = 25C Tc = 25C IS IDM, di/dt 100A/s, VDD VDSS, Tj 150C, RG = 0.2 IS = 0 VDSS ID25 RDS(on) V V V V A A A mJ V/ns V/ns W W W C/W C/W Features = = = 600 V 18 A 0.56 350 Maximum Ratings 600 600 20 30 18 90 18 TBD 5 >200 350 PDC S DD GSG =G S = 60 A = D 60 0B 6 PDC PDHS PDAMB RthJC RthJHS Tc = 25C, Derate 4.4W/C above 25C Tc = 25C TBD 3.0 TBD TBD Symbol Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) min. typ. max. V 4.6 100 TJ = 25C TJ =125C VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ TJM Tstg TL Weight VGS = 0 V, ID = 4 ma VDS = VGS, ID = 250 VGS = 20 VDC, VDS = 0 VDS = 0.8VDSS VGS=0 600 * Isolated Substrate - high isolation voltage (>2500V) - excellent thermal transfer - Increased temperature and power * * - - * * * cycling capability IXYS advanced Z-MOS process Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials V nA A mA S 50 1 0.53 6.4 -55 175 -55 + 175 300 3.5 +175 VGS = 20 V, ID = 0.5ID25 Pulse test, t 300S, duty cycle d 2% VDS = 50V, ID = 0.5ID25, pulse test Advantages C C C C g * High Performance RF Z-MOSTM * Optimized for RF and high speed * Common Source RF Package * A = Gate Source Drain B = Drain Source Gate Isolated Package, no insulator required 1.6mm(0.063 in) from case for 10 s IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET Symbol Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) min. RG Ciss Coss Crss Cstray Td(on) Ton Td(off) Toff Qg(on) Qgs Qgd Source-Drain Diode Symbol IS ISM VSD Trr Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM IF = Is, VGS=0 V, Pulse test, t 300 s, duty cycle 2% VGS = 10 V, VDS = 0.5 VDSS ID = 0.5 ID25 IG = 3mA VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 1 (External) Back Metal to any Pin VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz typ. max. 1 pF pF pF pF ns ns ns ns nC nC nC 2040 160 20 33 4 4 4 6 42 13 18 Characteristic Values (TJ = 25C unless otherwise specified) min. typ. max. 18 108 1.5 200 A V ns CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device. Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information published in this document at any time and without notice. IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 6,404,065 6,583,505 6,710,463 6,727,585 6,731,002 IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET Fig. 1 Gate Charge vs. Gate-to-Source Voltage VDS = 300V, ID = 9A, IG = 3m A 16 20 8V - 15V 7.5V Fig. 2 Typical Output Characteristics Gate-to-Source Voltage (V) 14 12 10 8 6 4 2 0 0 20 40 60 80 0 0 20 40 60 80 100 120 ID , Drain Currnet (A) 15 10 7V 6.5V 5 6V Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig. 3 Typical Transfer Characteristics VDS = 50V 50 45 40 35 30 25 20 15 10 5 0 5 6 7 8 9 10 11 12 13 14 15 Fig. 4 Extended Typical Output Characteristics 80 Top 12V - 15V 10V 9V 8.5V 8V 7.5V 7V 6.5V 6V ID , Drain Current (A) ID , Drain Currnet (A) 60 40 Bottom 20 0 0 20 40 60 80 100 120 VGS, Gate-to Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig. 5 V D S vs. Capacitance 10000 Capacitance (pF) 1000 100 10 1 0 60 120 180 240 300 360 420 480 V DS Voltage (V) IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET Fig. 6 Package Drawing 60: 1=G, 2=D, 3=S 60A: 1=G, 2=S, 3= D 60B: 1=D, 2=S, 3=G Doc #dsIXZR16N60_A/B REV 08/09 (c) 2009 IXYS RF An IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: sales@ixyscolorado.com Web: http://www.ixyscolorado.com |
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